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2SC3833
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3833 500 400 10 12(Pulse24) 4 100(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Switching Regulator and General Purpose
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=-1A VCB=10V, f=1MHz
(Ta=25C) 2SC3833 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 105typ V MHz pF V Unit
External Dimensions MT-100(TO3P)
5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
A A
V
19.90.3
4.0
a b
o3.20.1
20.0min
4.0max
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL () 28.5 IC (A) 7 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.7 IB2 (A) -1.4 ton (s) 1.0max tstg (s) 3.0max tf (s) 0.5max
5.450.1 B C E
5.450.1
Weight : Approx 6.0g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
12
VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t)( V ) Base-Emitter Saturation Voltage V B E (s a t)( V ) (I C/ I B= 5)
I C - V BE Temperature Characteristics (Typical)
12 (VCE=4V)
1000m
10 Collector Current I C( A)
A
80 0m A
60 0m A
10 1
-55C (Case 25C (Cas
125
Collector Current I C (A)
V B E( sat)
8
400m A
Temp)
8
p) Tem
6
e Temp)
as e 2 5 Temp ) C
(Cas
4
4
(Ca
200mA
IB=100mA
2
12
5
V C E( sat) 0 0.02 0.05 0.1 0.5 1 5
-5
5
C
2
0
0
1
2
3
4
10
0
0
0.2
0.4
0.6
0.8
-55C
C
25C
125
(C
1.0
(Case
C
Temp
e Te
se T C (Ca
se
emp)
mp)
6
)
1.2
Collector-Emitter Voltage V C E( V)
Collector Current I C( A)
Base-Emittor Voltage V B E( V)
(VCE=4V) 50 8
j- a( C/ W)
hFE - I C Characteristics (Typical)
ton*t st g*t f( s)
5
t on *t stg * t f - I C Characteristics (Typical)
j-a - t Characteristics
2
125C
Transient Thermal Resistance
DC Curr ent Gain h FE
t s tg VCC 200V I C: I B1: -I B 2= 10:1:2 1 0.5 ton
25C
-30C
1
10
Sw it ching Time
0.5
tf 0.1 0.5 1 Collector Current I C( A) 5 10
5 0.02
0.05
0.1
0.5
1
5
10 12
0.1
1
10 Time t(ms)
100
1000
Collector Current I C( A)
Safe Operating Area (Single Pulse)
30
10
Reverse Bias Safe Operating Area
30 100
P c - T a Derating
0
s
5 Collect or Curr ent I C( A)
5 Collector Cur rent I C( A)
Maximu m Power Di ssip ation P C( W)
10
10
10
1ms
DC c= (T 25
ms
W ith In fin
1 0.5
ite
C )
1 0.5
he
50
at si nk
0.1 0.05
Without Heatsink Natural Cooling
0.1 0.05
Without Heatsink Natural Cooling L=3mH -IB2=1A Duty:less than 1%
0.01 5 10 50 100 500 Collector-Emitter Voltage V C E( V)
0.01 5
10
50
100
500
3.5 0
Without Heatsink 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
73
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